Silicon wafers without sawing

Measurement and Analysis of Wire Sawing Induced Residual Stress in Photovoltaic Silicon Wafers

Contactless Characterization of Silicon Wafers

Contactless measurements are attractive and more commonly used because they do not contaminate the sample and generally do not require sample preparation. After an outline of the more common contactless characterization techniques, I will discuss a few of these in more detail. In particular resistivity or doping density profiling, minority carrier lifetime, stress, temperature, layer thickness,...

Terahertz imaging of silicon wafers

Silicon samples with and without implanted layers have been imaged with a standard time-domain terahertz ~THz! imaging system. The carrier concentration and mobility of the substrate have been extracted from the frequency dependence of the THz transmittance using a simple model based on the Drude approximation. The carrier concentration of implanted layers could be determined simply from the re...

Functionalized silicon nanoparticles from reactive cavitation erosion of silicon wafers.

A new sonochemical process for the top-down production of silicon nanoparticles (<1 nm) with surface functional groups is described. The procedure involves a combination of acoustic cavitation erosion of a single-crystalline silicon surface coupled with simultaneous reaction with a reactive organic compound such as 1-hexyne. The sonochemical formation of the photoluminescent silicon nanoparticl...

Silicon-on-Insulator Wafers with Buried Cavities